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Polysilicon passivation contact technology (commonly known as TOPCon, also known as POLO, PERPoly, monoPolyTM, iTOPConTM, PERTOPTM) is widely considered to be one of the most promising next-generation high-efficiency crystalline silicon battery technologies after PERC cells, and is a crystalline silicon solar Research focus in the field of battery technology. The solar and optoelectronic device research team of the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, led by researchers Ye Jichun and Yan Baojie, and with the joint efforts of Zeng Yuheng, Liao Mingdun and other team members, began to study TOPCon technology at the end of 2015. The core staff of the team has accumulated more than 30 years of industry experience, focusing on the close integration of basic research and industrial application needs, and aims to provide theoretical and practical support for the industrial application of this technology. Recently, the Ningbo Materials Institute team has made significant progress in the development of high-performance passive contact technology, efficient full-cell integration, key material development, and verification equipment development.
In the development of high-performance passivation contact technology, Ningbo Materials Institute comprehensively uses high-quality interfacial silicon oxide, dense polysilicon film, optimized doping distribution curve, efficient hydrogen passivation and other technologies to obtain excellent passivation contact indicators (using single-sided saturation The current density J0, s and the implicit open circuit voltage iVoc are characterized. The lower J0, s, the better, and the higher iVoc, the better). The key passivation index of the best n-type technology is the lowest J0, s = 0.8fA / cm2, the highest iVoc = 749mV (Sol. Energy, 2019, 194, 18); the key passivation index of the best p-type technology is the lowest J0 , s = 6.0fA / cm2, the highest iVoc = 722mV (Sol. Energy Mater. Sol. Cells, 2020, 210, 110487), which is at the international advanced level. Figure 1 (a, b) shows the progress of major research institutions in the world on key passivation indicators (J0, s).
In terms of high-efficiency battery development, Ningbo Institute of Materials insists on independent research and development in the laboratory. After years of efforts, it developed an n-type TOPCon battery with an efficiency of 24.27% in January 2020 (independent test of Nankai University). Figure 2 (a) shows the progress of the world's major research institutions in the highest efficiency of this type of battery. It is worth mentioning that the highest efficiency battery integrates new materials, while the highest efficiency of the conventional control battery is only 24.02%, as shown in Figure 2 (b). According to statistics, the average efficiency of batteries using new materials is 0.32% abs higher than that of conventional batteries (paper preparation). Ningbo Materials Institute registered this new type of passive contact battery as a PERTOPTM battery (Passivated Emitter and Rear Tunnel Oxide Passivation).
In the development of key materials, Ningbo Materials Institute has also done a lot of research work. For the interface silicon oxide layer, Ningbo Materials Institute has experimented and evaluated various silicon oxide preparation methods, including nitric acid oxidation, ultraviolet ozone oxidation, ozone water oxidation, mixed acid oxidation, thermal oxidation, plasma assisted oxidation, and atomic layer. Deposition, plasma deposition, magnetron sputtering oxidation, etc. The research shows that the silicon oxide obtained by different methods differs in thickness and composition, but as long as a reasonable subsequent process is combined, the saturation current density of the n-type TOPCon structure obtained by using the above silicon oxide materials can be lower than 12fA / cm2 , Part can be lower than 2fA / cm2, can meet the needs of industrial production. It is worth mentioning that Ningbo Materials has developed a plasma-assisted in-situ oxidation method for the in-situ silicon oxide preparation technology that is urgently needed for the PECVD process route. The silicon oxide material has achieved excellent passivation and contact performance. The optimal index of the silicon wafer is J0, s = 2.0fA / cm2, iVoc = 747mV (Sol. Energy Mater. Sol. Cells, 2020, 208, 110389), the optimal index of the p-type silicon wafer is J0, s = 3.0fA / cm2, iVoc = 742mV (Sol. Energy Mater. Sol. Cells, 2019, 200, 109926); by optimizing silicon oxide preparation technology, a p-type TOPCon structure with excellent passivation is obtained. The optimal index is J0, s = 6.0fA / cm2, iVoc = 722mV (Sol. Energy Mater. Sol. Cells, 2020, 210, 110487), which is one of the optimal indexes obtained so far by using PECVD route. In the preparation of polysilicon, Ningbo Materials Institute also used a variety of methods to experimentally evaluate the technical routes of PECVD, LPCVD, Sputtering, and E-Beam. Based on the understanding of the advantages and disadvantages of different technical routes, Ningbo Materials chose to focus on the PECVD technical route. The film-forming conditions based on PECVD doped amorphous silicon, doping control, crystallization control, film release suppression, and square resistance adjustment are Accumulated a wealth of experience to prepare TOPCon structure with excellent performance.
In summary, Ningbo Materials carried out systematic research on the basic scientific issues and industrial application of TOPCon technology, and some key indicators and battery efficiency have made significant progress; as of March 2020, it has been in the industry mainstream journal Sol. Energy Mater. Sol . Cells, Sol. Energy, Sol. RRL, etc. published 14 journal papers; applied for multiple national invention patents, initially formed independent intellectual property rights; and a professional institution of the Chinese Academy of Sciences completed a "TOPCon Solar Cell Patent Analysis Report 2019"; currently The mass-production equipment based on the PECVD technology route, which is being jointly developed with the cooperation unit, aims to solve the problem of the industry lacking core equipment.
The research was supported by the National Key Research and Development Program (2018YFB1500403), the National Natural Science Foundation of China (61874177, 61974178), and the Zhejiang Natural Science Foundation (LY19F040002).
Figure 1 J0, s achieved by (a) n-type TOPCon technology and (b) p-type TOPCon technology by major scientific research institutions all over the world
Figure 2 (a) Progress of the efficiency of n-type TOPCon batteries by major scientific research institutions around the world, (b) Photoinduced JV curves of the highest efficiency n-type PERTOPTM battery and control battery of Ningbo Materials Institute
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